BSS84 P-Channel DMOS Transistor

P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor (DMOS) transistor in a small Surface-Mounted Device (SMD) plastic package.This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.

Features of BSS84 P-Channel DMOS Transistor
 

• Voltage-Controlled P-Channel Small-Signal Switch
• High Saturation Current
• Low threshold voltage
• High-speed switching

Characteristics :
 

• Drain-Source Voltage : -50V
• Gate-Source Voltage : +-20v
• Maximum Power Dissipation(1) : 0.36W
• Storage temperature : −65 to 150 °C
• Junction temperature : −65 to 150 °C
• Package: SOT23

Package includes:
 

• 1 x BSS84 P-Channel DMOS Transistor

Development resources
 

• Datasheet BSS84