DMN6068SE-13 60V N-channel MOSFET

DMN6068SE-13 is a 60V N-channel enhancement mode MOSFET in a 3 pin SOT223 package. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Features:

• Drain Source Voltage (Vdss)  :  60V
• Continuous Drain Current (Id)  :  4.1A
• Power Dissipation (Pd)  :  2W
• Drain Source On Resistance (RDS(on)@Vgs,Id)  :  68mΩ@10V,12A
• Gate Threshold Voltage (Vgs(th)@Id)  :  3V@250uA
• Transistor Type  :  1 N-Channel
• Input Capacitance (Ciss@Vds)  :  502pF@30V
• Total Gate Charge (Qg@Vgs)  :  10.3nC@10V
• Operating Temperature  :  -55°C  ~ +150°C @(Tj) 
• Package  :  SOT-223-3

Documents:

• DMN6068SE-13 Datasheet

Package includes:

• 1 X DMN6068SE-13 N-channel MOSFET